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Product details

FA4F4M-T1B-A

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Box

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Mfr: Renesas Electronics America Inc
Package: Box
Power - Max: 200 mW
Resistor - Base (R1): 22 Ohms
Resistor - Emitter Base (R2): 22 Ohms
Series: -
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA
Voltage - Collector Emitter Breakdown (Max): 50 V