BSM250D17P2E004 product image

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Product details

BSM250D17P2E004

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Arrays
Package: Box

Description

Mosfet Array 2 N-Channel (Half Bridge) 1700V (1.7kV) 250A (Tc) 1800W (Tc) Chassis Mount Module

Datasheet View datasheet

Specifications

Base Product Number: BSM250
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
FET Feature: Silicon Carbide (SiC)
FET Type: 2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Mfr: Rohm Semiconductor
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Box
Package / Case: Module
Power - Max: 1800W (Tc)
Rds On (Max) @ Id, Vgs: -
Series: -
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 66mA