FS45MR12W1M1B11BOMA1 product image

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Product details

FS45MR12W1M1B11BOMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tray

Description

Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 25A (Tj) 20mW (Tc) Chassis Mount AG-EASY1BM-2

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Specifications

Base Product Number: FS45MR12
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Silicon Carbide (SiC)
FET Type: 6 N-Channel (3-Phase Bridge)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Mfr: Infineon Technologies
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tray
Package / Case: Module
Power - Max: 20mW (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Series: CoolSiC™+
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.55V @ 10mA