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DMTH10H010SCT product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DMTH10H010SCT

Availability on request

Manufacturer
Diodes Incorporated
Category
Transistors - FETs, MOSFETs - Single
Package
Tube

Description

N-Channel 100 V 100A (Ta) 2.5W (Ta), 187W (Tc) Through Hole TO-220-3

Specifications
Base Product Number
DMTH10
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4468 pF @ 50 V
Mfr
Diodes Incorporated
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power Dissipation (Max)
2.5W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs
9.5mOhm @ 13A, 10V
Series
-
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA