DMT10H072LFDF-7 product image

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Product details

DMT10H072LFDF-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 100 V 4A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F)

Datasheet View datasheet

Specifications

Base Product Number: DMT10
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Series: -
Supplier Device Package: U-DFN2020-6 (Type F)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA