FDI047AN08A0 product image

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Product details

FDI047AN08A0

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 75 V 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)

Datasheet Not provided

Specifications

Base Product Number: FDI047
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Series: PowerTrench®
Supplier Device Package: I2PAK (TO-262)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA