DGTD65T50S1PT product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DGTD65T50S1PT

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT Field Stop 650 V 100 A 375 W Through Hole TO-247

Datasheet Not provided

Specifications

Base Product Number: DGTD65
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 200 A
Gate Charge: 287 nC
IGBT Type: Field Stop
Input Type: Standard
Mfr: Diodes Incorporated
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power - Max: 375 W
Reverse Recovery Time (trr): 80 ns
Series: -
Supplier Device Package: TO-247
Switching Energy: 770µJ (on), 550µJ (off)
Td (on/off) @ 25°C: 58ns/328ns
Test Condition: 400V, 50A, 7.9Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max): 650 V