BSM600C12P3G201 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BSM600C12P3G201

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tray

Description

N-Channel 1200 V 600A (Tc) 2460W (Tc) Chassis Mount Module

Datasheet View datasheet

Specifications

Base Product Number: BSM600
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): -
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 10 V
Mfr: Rohm Semiconductor
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Package: Tray
Package / Case: Module
Power Dissipation (Max): 2460W (Tc)
Rds On (Max) @ Id, Vgs: -
Series: -
Supplier Device Package: Module
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +22V, -4V
Vgs(th) (Max) @ Id: 5.6V @ 182mA