BSM180C12P2E202 product image

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Product details

BSM180C12P2E202

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tray

Description

N-Channel 1200 V 204A (Tc) 1360W (Tc) Chassis Mount Module

Datasheet View datasheet

Specifications

Base Product Number: BSM180
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): -
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
Mfr: Rohm Semiconductor
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Package: Tray
Package / Case: Module
Power Dissipation (Max): 1360W (Tc)
Rds On (Max) @ Id, Vgs: -
Series: -
Supplier Device Package: Module
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +22V, -6V
Vgs(th) (Max) @ Id: 4V @ 35.2mA