DMT6012LSS-13 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DMT6012LSS-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 60 V 10.4A (Ta) 1.2W (Ta) Surface Mount 8-SO

Datasheet View datasheet

Specifications

Base Product Number: DMT6012
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Series: -
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA