BS108ZL1G product image

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Product details

BS108ZL1G

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Cut Tape (CT), Tape & Box (TB)

Description

N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Datasheet View datasheet

Specifications

Base Product Number: BS108
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Cut Tape (CT), Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 2.8V
Series: -
Supplier Device Package: TO-92 (TO-226)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.5V @ 1mA