2N2896 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N2896

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 90 V 1 A 120MHz 1.8 W Through Hole TO-18 (TO-206AA)

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 1 A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
Frequency - Transition: 120MHz
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -
Package: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 1.8 W
Series: -
Supplier Device Package: TO-18 (TO-206AA)
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 90 V