FCU600N65S3R0 product image

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Product details

FCU600N65S3R0

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 6A (Tc) 54W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Base Product Number: FCU600
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Series: SuperFET® III
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4.5V @ 600µA