FCH165N65S3R0-F155 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FCH165N65S3R0-F155

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 19A (Tc) 154W (Tc) Through Hole TO-247-3

Datasheet View datasheet

Specifications

Base Product Number: FCH165
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 154W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Series: SuperFET® III
Supplier Device Package: TO-247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA