IRF9952PBF product image

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Product details

IRF9952PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tube

Description

Mosfet Array N and P-Channel 30V 3.5A, 2.3A 2W Surface Mount 8-SO

Datasheet View datasheet

Specifications

Base Product Number: IRF9952PBF
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 2W
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Series: HEXFET®
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA