IRGB20B60PD1PBF product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

IRGB20B60PD1PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT 600 V 40 A 215 W Through Hole TO-220AB

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Gate Charge: 68 nC
IGBT Type: NPT
Input Type: Standard
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 215 W
Reverse Recovery Time (trr): 28 ns
Series: -
Supplier Device Package: TO-220AB
Switching Energy: 95µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 20ns/115ns
Test Condition: 390V, 13A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max): 600 V