RN2108MFV,L3F product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

RN2108MFV,L3F

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel (TR)

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Datasheet Not provided

Specifications

Base Product Number: RN2108
Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Package: Tape & Reel (TR)
Package / Case: SOT-723
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Series: -
Supplier Device Package: VESM
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50 V