FF200R12KE3B2HOSA1 product image

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Product details

FF200R12KE3B2HOSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - IGBTs - Modules
Package: Tray

Description

IGBT Module Half Bridge 1200 V 295 A 1050 W Chassis Mount Module

Datasheet Not provided

Specifications

Base Product Number: FF200R12
Configuration: Half Bridge
Current - Collector (Ic) (Max): 295 A
Current - Collector Cutoff (Max): 5 mA
IGBT Type: -
Input: Standard
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Package: Tray
Package / Case: Module
Power - Max: 1050 W
Series: -
Supplier Device Package: Module
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 1200 V