BSH111,215 product image

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Product details

BSH111,215

Availability on request

Manufacturer: Nexperia USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 55 V 335mA (Ta) 830mW (Tc) Surface Mount TO-236AB

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Mfr: Nexperia USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Series: TrenchMOS™
Supplier Device Package: TO-236AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 1.3V @ 1mA