2N1613L product image

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Product details

2N1613L

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 30 V 500 mA 800 mW Through Hole TO-39

Datasheet Not provided

Specifications

Base Product Number: 2N1613
Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 800 mW
Series: -
Supplier Device Package: TO-39
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 30 V