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2N1480 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N1480

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
Bulk

Description

Bipolar (BJT) Transistor NPN 55 V 1.5 A 1 W Through Hole TO-5

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1.5 A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 200mA, 4V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AA, TO-5-3 Metal Can
Power - Max
1 W
Series
-
Supplier Device Package
TO-5
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
750mV @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
55 V