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FF150R12ME3GBOSA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FF150R12ME3GBOSA1

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - IGBTs - Modules
Package
Bulk

Description

IGBT Module Trench Field Stop Half Bridge 1200 V 200 A 695 W Chassis Mount Module

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
FF150R12M
Configuration
Half Bridge
Current - Collector (Ic) (Max)
200 A
Current - Collector Cutoff (Max)
5 mA
IGBT Type
Trench Field Stop
Input
Standard
Input Capacitance (Cies) @ Vce
10.5 nF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Chassis Mount
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 125°C
Package
Bulk
Package / Case
Module
Power - Max
695 W
Series
EconoDUAL™
Supplier Device Package
Module
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Voltage - Collector Emitter Breakdown (Max)
1200 V

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