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HGTP7N60A4-F102 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

HGTP7N60A4-F102

Availability on request

Manufacturer
onsemi
Category
Transistors - IGBTs - Single
Package
Tube

Description

IGBT 600 V 34 A 125 W Through Hole TO-220-3

Specifications
Base Product Number
HGTP7N60
Current - Collector (Ic) (Max)
34 A
Current - Collector Pulsed (Icm)
56 A
Gate Charge
60 nC
IGBT Type
-
Input Type
Standard
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power - Max
125 W
Series
-
Supplier Device Package
TO-220-3
Switching Energy
55µJ (on), 150µJ (off)
Td (on/off) @ 25°C
11ns/100ns
Test Condition
390V, 7A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 7A
Voltage - Collector Emitter Breakdown (Max)
600 V