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Product details

FPF2C110BI07AS2

Availability on request

Manufacturer
onsemi
Category
Transistors - IGBTs - Modules
Package
Tray

Description

IGBT Module Half Bridge 650 V 40 A 300 W Through Hole F2

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
FPF2C110
Configuration
Half Bridge
Current - Collector (Ic) (Max)
40 A
Current - Collector Cutoff (Max)
250 µA
IGBT Type
-
Input
Standard
Mfr
onsemi
Mounting Type
Through Hole
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C
Package
Tray
Package / Case
30-DIP Module
Power - Max
300 W
Series
-
Supplier Device Package
F2
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max)
650 V

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