EPC2108 product image

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Product details

EPC2108

Availability on request

Manufacturer: EPC
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
FET Feature: GaNFET (Gallium Nitride)
FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Mfr: EPC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 9-VFBGA
Power - Max: -
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Series: eGaN®
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA