64-9146 product image

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Product details

64-9146

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT)

Description

N-Channel 20 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Datasheet Not provided

Specifications

Base Product Number: IRF6691
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Series: HEXFET®
Supplier Device Package: DIRECTFET™ MT
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 2.5V @ 250µA