2SC2235-O(T6FJT,FM product image

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Product details

2SC2235-O(T6FJT,FM

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD

Datasheet Not provided

Specifications

Base Product Number: 2SC2235
Current - Collector (Ic) (Max): 800 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Power - Max: 900 mW
Series: -
Supplier Device Package: TO-92MOD
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 120 V