2SC2229-O(MITIF,M) product image

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Product details

2SC2229-O(MITIF,M)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 150 V 50 mA 120MHz 800 mW Through Hole TO-92MOD

Datasheet Not provided

Specifications

Base Product Number: 2SC2229
Current - Collector (Ic) (Max): 50 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Power - Max: 800 mW
Series: -
Supplier Device Package: TO-92MOD
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 150 V