2SA1972,F(J product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2SA1972,F(J

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor PNP 400 V 500 mA 35MHz 900 mW Through Hole TO-92MOD

Datasheet Not provided

Specifications

Base Product Number: 2SA1972
Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
Frequency - Transition: 35MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Power - Max: 900 mW
Series: -
Supplier Device Package: TO-92MOD
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 400 V