APT80SM120J product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

APT80SM120J

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 1200 V 51A (Tc) 273W (Tc) Chassis Mount SOT-227

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: SOT-227-4, miniBLOC
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Series: -
Supplier Device Package: SOT-227
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +25V, -10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA