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Product details

BSM75GB170DN2HOSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - IGBTs - Modules
Package: Tray

Description

IGBT Module Half Bridge 1700 V 110 A 625 W Chassis Mount Module

Datasheet Not provided

Specifications

Base Product Number: BSM75G
Configuration: Half Bridge
Current - Collector (Ic) (Max): 110 A
IGBT Type: -
Input: Standard
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Package: Tray
Package / Case: Module
Power - Max: 625 W
Series: -
Supplier Device Package: Module
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max): 1700 V