CSD19538Q2 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

CSD19538Q2

Availability on request

Manufacturer: Texas Instruments
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)

Datasheet Not provided

Specifications

Base Product Number: CSD19538
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Mfr: Texas Instruments
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 6-WDFN Exposed Pad
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Series: NexFET™
Supplier Device Package: 6-WSON (2x2)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 250µA