CSD19538Q3AT product image

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Product details

CSD19538Q3AT

Availability on request

Manufacturer: Texas Instruments
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

Datasheet Not provided

Specifications

Base Product Number: CSD19538
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Mfr: Texas Instruments
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Series: NexFET™
Supplier Device Package: 8-VSONP (3x3.3)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 250µA