DMT69M8LPS-13 product image

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Product details

DMT69M8LPS-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 60 V 10.2A (Ta), 70A (Tc) 2.3W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: PowerDI5060-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2V @ 250µA