2SJ665-DL-1EX product image

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Product details

2SJ665-DL-1EX

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 100 V 27A (Ta) 65W (Tc) Surface Mount TO-263-2

Datasheet Not provided

Specifications

Base Product Number: 2SJ665
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V
Series: -
Supplier Device Package: TO-263-2
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: -