DMTH10H010LCT product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DMTH10H010LCT

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 108A (Tc) 2.4W (Ta), 166W (Tc) Through Hole TO-220-3

Datasheet View datasheet

Specifications

Base Product Number: DMTH10
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 2.4W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Series: -
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA