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Product details

VS-GA200HS60S1

Availability on request

Manufacturer
Vishay General Semiconductor - Diodes Division
Category
Transistors - IGBTs - Modules
Package
Bulk

Description

IGBT Module Half Bridge 600 V 480 A 830 W Chassis Mount INT-A-PAK

Datasheet Not provided
Specifications
Base Product Number
GA200
Configuration
Half Bridge
Current - Collector (Ic) (Max)
480 A
Current - Collector Cutoff (Max)
1 mA
IGBT Type
-
Input
Standard
Input Capacitance (Cies) @ Vce
32.5 nF @ 30 V
Mfr
Vishay General Semiconductor - Diodes Division
Mounting Type
Chassis Mount
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Package
Bulk
Package / Case
INT-A-Pak
Power - Max
830 W
Series
-
Supplier Device Package
INT-A-PAK
Vce(on) (Max) @ Vge, Ic
1.21V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max)
600 V