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Product details

IPI120N10S405AKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 120A (Tc) 190W (Tc) Through Hole PG-TO262-3-1

Datasheet Not provided

Specifications

Base Product Number: IPI120N
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Series: Automotive, AEC-Q101, OptiMOS™
Supplier Device Package: PG-TO262-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 120µA