BSC0910NDIATMA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BSC0910NDIATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 11A, 31A 1W Surface Mount PG-TISON-8

Datasheet View datasheet

Specifications

Base Product Number: BSC0910
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate, 4.5V Drive
FET Type: 2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power - Max: 1W
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA