BSC026N08NS5ATMA1 product image

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Product details

BSC026N08NS5ATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 80 V 23A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-6

Datasheet View datasheet

Specifications

Base Product Number: BSC026
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8-6
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 115µA