BSB104N08NP3GXUSA1 product image

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Product details

BSB104N08NP3GXUSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 80 V 13A (Ta), 50A (Tc) 2.8W (Ta), 42W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

Datasheet View datasheet

Specifications

Base Product Number: BSB104
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 3-WDSON
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Series: OptiMOS™
Supplier Device Package: MG-WDSON-2, CanPAK M™
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 40µA