DMT10H010LSS-13 product image

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Product details

DMT10H010LSS-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO

Datasheet View datasheet

Specifications

Base Product Number: DMT10
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Series: -
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.8V @ 250µA