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BSM180D12P3C007 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BSM180D12P3C007

Availability on request

Manufacturer
Rohm Semiconductor
Category
Transistors - FETs, MOSFETs - Arrays
Package
Bulk

Description

Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module

Specifications
Base Product Number
BSM180
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
FET Feature
Silicon Carbide (SiC)
FET Type
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Mfr
Rohm Semiconductor
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Package
Bulk
Package / Case
Module
Power - Max
880W
Rds On (Max) @ Id, Vgs
-
Series
-
Supplier Device Package
Module
Vgs(th) (Max) @ Id
5.6V @ 50mA