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Product details

VS-GT200TP065N

Availability on request

Manufacturer: Vishay General Semiconductor - Diodes Division
Category: Transistors - IGBTs - Modules
Package: Tube

Description

IGBT Module Trench Half Bridge 650 V 221 A 600 W Chassis Mount INT-A-PAK

Datasheet Not provided

Specifications

Base Product Number: GT200
Configuration: Half Bridge
Current - Collector (Ic) (Max): 221 A
Current - Collector Cutoff (Max): 60 µA
IGBT Type: Trench
Input: Standard
Mfr: Vishay General Semiconductor - Diodes Division
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Tube
Package / Case: INT-A-Pak
Power - Max: 600 W
Series: -
Supplier Device Package: INT-A-PAK
Vce(on) (Max) @ Vge, Ic: 2.12V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 650 V