IPG20N10S4L22AATMA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

IPG20N10S4L22AATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array 2 N-Channel (Dual) 100V 20A 60W Surface Mount, Wettable Flank PG-TDSON-8-10

Datasheet View datasheet

Specifications

Base Product Number: IPG20N10
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Mfr: Infineon Technologies
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerVDFN
Power - Max: 60W
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 2.1V @ 25µA