2N3960 product image

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Product details

2N3960

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)

Datasheet Not provided

Specifications

Base Product Number: 2N3960
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
Frequency - Transition: -
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 400 mW
Series: -
Supplier Device Package: TO-18 (TO-206AA)
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max): 12 V