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Product details

IRG7T150HF12B

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - IGBTs - Modules
Package: Box

Description

IGBT Module Half Bridge 1200 V 300 A 910 W Chassis Mount POWIR® 62

Datasheet View datasheet

Specifications

Base Product Number: IRG7T
Configuration: Half Bridge
Current - Collector (Ic) (Max): 300 A
Current - Collector Cutoff (Max): 2 mA
IGBT Type: -
Input: Standard
Input Capacitance (Cies) @ Vce: 20.2 nF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Box
Package / Case: POWIR® 62 Module
Power - Max: 910 W
Series: -
Supplier Device Package: POWIR® 62
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Voltage - Collector Emitter Breakdown (Max): 1200 V