GPA030A135MN-FDR product image

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Product details

GPA030A135MN-FDR

Availability on request

Manufacturer: SemiQ
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT Trench Field Stop 1350 V 60 A 329 W Through Hole TO-3PN

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Gate Charge: 300 nC
IGBT Type: Trench Field Stop
Input Type: Standard
Mfr: SemiQ
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-3P-3, SC-65-3
Power - Max: 329 W
Reverse Recovery Time (trr): 450 ns
Series: -
Supplier Device Package: TO-3PN
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C: 30ns/145ns
Test Condition: 600V, 30A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max): 1350 V