GPA015A120MN-ND product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

GPA015A120MN-ND

Availability on request

Manufacturer: SemiQ
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT and Trench 1200 V 30 A 212 W Through Hole TO-3PN

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 45 A
Gate Charge: 210 nC
IGBT Type: NPT and Trench
Input Type: Standard
Mfr: SemiQ
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-3P-3, SC-65-3
Power - Max: 212 W
Reverse Recovery Time (trr): 320 ns
Series: -
Supplier Device Package: TO-3PN
Switching Energy: 1.61mJ (on), 530µJ (off)
Td (on/off) @ 25°C: 25ns/166ns
Test Condition: 600V, 15A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Voltage - Collector Emitter Breakdown (Max): 1200 V