ES6U1T2R product image

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Product details

ES6U1T2R

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

P-Channel 12 V 1.3A (Ta) 700mW (Ta) Surface Mount 6-WEMT

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
FET Feature: Schottky Diode (Isolated)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Mfr: Rohm Semiconductor
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 6-SMD, Flat Leads
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Series: -
Supplier Device Package: 6-WEMT
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 1V @ 1mA